PART |
Description |
Maker |
ST2306SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
STP9527 |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN4526 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST2304SRG |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
ST3422A |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT NPT Trench Technology, Positive temperature coefficient Extremely enhanced avalanche capability
|
Fairchild Semiconductor List of Unclassifed Manufacturers
|
PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
AOTF10T60P |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
10-FZ122PA150SC-P990F08 10-F0122PA150SC-P990F09 |
Trench Fieldstop IGBT technology
|
Vincotech
|